MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS2
0.2+/-0.05
(0.22)
(0.22)
(0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS2 is a MOS FET type transistor
specifically designed for VHF/UHF RF po
-wer amplifiers applications.
This device have an interal monolithic zener
diode from gate to source for ESD protection.
OUTLINE
DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15
1.0+/-0.05
2
FEATURES
鈥igh power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz,520MHz
鈥igh Efficiency:65%typ.(175MHz)
鈥igh Efficiency:65%typ.(520MHz)
鈥ntegrated gate protection diode
3
(0.25)
INDEX MARK
(Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS2-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter 鈥淕鈥?after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS2
MITSUBISHI ELECTRIC
1/9
17 Jan. 2006
3.5+/-0.05
2.0+/-0.05