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RD02MUS1B Datasheet

  • RD02MUS1B

  • Silicon MOSFET Power Transistor 175MHz,520MHz,2W

  • 8頁

  • MITSUBISHI   MITSUBISHI

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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
0.2+/-0.05
(0.22)
(0.22)
(0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
OUTLINE
DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15
1.0+/-0.05
2
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
3
(0.25)
INDEX MARK
(Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter 鈥淕鈥?after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1B
MITSUBISHI ELECTRIC
1/8
30 Jul 2007
3.5+/-0.05
2.0+/-0.05

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