RD01MUS1 Datasheet

IC型號(hào)：
RD01MUS1
PDF描述：
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
文件大小：
232.98KB
PDF頁(yè)數(shù)：
6頁(yè)
芯片廠(chǎng)家：
MITSUBISHI

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MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD01MUS1

4.4+/-0.1

1.6+/-0.1

LOT No.

蠁

RoHS Compliance,

DESCRIPTION

Silicon MOSFET Power Transistor 520MHz,1W

OUTLINE DRAWING

1.5+/-0.1

RD01MUS1 is a MOS FET type transistor specifically

designed for VHF/UHF RF amplifiers applications.

TYPE NAME

High power gain:

Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz

High Efficiency: 65%typ.

1.5+/-0.1

0.4 +0.03

-0.05

Terminal No.

1 : GATE

2 : SOURSE

3 : DRAIN

UNIT : mm

APPLICATION

For output stage of high power amplifiers in VHF/UHF

Band mobile radio sets.

0.4+/-0.07 0.5+/-0.07 0.4+/-0.07

0.1 MAX

RoHS COMPLIANT

RD01MUS1-101,T113 is a RoHS compliant products.

This product include the lead in high melting temperature type solders.

How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

ABSOLUTE MAXIMUM RATINGS

(Tc=25

擄C

UNLESS OTHERWISE NOTED)

SYMBOL

VDSS

VGSS

Pch

Tch

Tstg

Rth j-c

PARAMETER

Drain to source voltage

Gate to source voltage

Channel dissipation

Input Power

Drain Current

Channel Temperature

Storage temperature

Thermal resistance

CONDITIONS RATINGS UNIT

Vgs=0V

Vds=0V

+/-10

Tc=25

擄C

3.6

Zg=Zl=50

鈩?/div>

600

擄C

150

-40 to +125

擄C

擄C/W

Junction to case

34.5

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

(Tc=25

擄C

, UNLESS OTHERWISE NOTED)

SYMBOL

DSS

GSS

Vth

Pout

畏D

PARAMETER

Zero gate voltage drain current

Gate to source leak current

Gate threshold Voltage

Output power

Drain efficiency

CONDITIONS

=17V, V

=0V

=10V, V

=0V

=12V, I

=1mA

=7.2V, Pin=30mW

f=520MHz,Idq=100mA

MIN

0.8

LIMITS

TYP

1.8

1.4

UNIT

MAX

Note : Above parameters , ratings , limits and conditions are subject to change.

RD01MUS1

MITSUBISHI ELECTRIC

1/6

10 Jan 2006

3.9+/-0.3

FEATURES

0.8 MIN 2.5+/-0.1

型號(hào)

版本

描述

廠(chǎng)商

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RD01MUS1

英文版

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

RD01MUS1
RD01MUS2

英文版

Silicon MOSFET Power Transistor 520MHz,1W

RD01MUS2

RD01MUS1 Datasheet

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