MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
4.4+/-0.1
1.6+/-0.1
LOT No.
3.9+/-0.3
3
1.5+/-0.1
0.
1
RoHS Compliance,
DESCRIPTION
Silicon MOSFET Power Transistor 30MHz,0.3W
OUTLINE DRAWING
1.5+/-0.1
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
0.4 +0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
V
鹵10
Tc=25
擄C
3.1
W
mW
Zg=Zl=50
鈩?/div>
10
mA
-
200
擄C
-
150
-
-40 to +125
擄C
擄C/W
Junction to case
40
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
Vth
Pout
畏
D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=12.5V, Pin=4mW,
f=30MHz,Idq=50mA
MIN
-
-
1
0.3
55
LIMITS
TYP
MAX.
-
25
-
1
2
3
0.7
-
65
-
UNIT
uA
uA
V
W
%
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HHS1
MITSUBISHI ELECTRIC
1/6
10 Jan 2006
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