SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC10S01G THRU RC10S10G
SILICON GPP
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 10A
FEATURES
鈥?Glass passivated junction chip
鈥?High surge capability
鈥?Solderable electrode surfaces Ideal for hybrids
TECHNICAL
SPECIFICATION
MECHANICAL DATA
鈥?Polarity: Bottom or upper electrode denotes
cathode according to the notice
in package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
SYMBOL
V
RRM
Maximum Repetitive Peak Reverse Voltage
V
RMS
Maximum RMS Voltage
V
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
F(AV)
o
(Note 2)
(T
a
=55 C)
Peak Forward Surge Current (8.3ms single
I
FSM
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
(at rated forward current)
Maximum DC Reverse Current
T
a
=25
o
C
I
R
o
(at rated DC blocking voltage)
T
a
=150 C
C
J
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance
(Note 3) R
胃
(ja)
Storage and Operation Junction Temperature T
STG
,T
J
Note:
1. Measured at 1 MHz and applied voltage of 4.0V
dc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
RC10S RC10S RC10S RC10S RC10S RC10S
UNITS
01G
02G
04G
06G
08G
10G
100
200
400
600
800
1000
V
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
10
400
1.0
10
300
300
1
-50 to +150
A
A
V
碌A(chǔ)
碌A(chǔ)
pF
o
C/W
o
C
http://www.sse-diode.com
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