200V 10A
Bridge Diode
RBV-4102
sAbsolute
maximum ratings
Parameter
V
RSM
V
RM
I
F(AV)
I
FSM
Tj
Tstg
Ratings
250
200
10
80
鈥?0 to +150
鈥?0 to +150
Unit
V
V
A
A
擄C
擄C
50Hz Half-cycle sinewave Single Shot
Conditions
sElectrical
characteristics
Parameter
V
F
I
R
H.I
R
Rth( j-c)
Ratings
1.1max
10max
100max
2.0max
Unit
V
碌A(chǔ)
碌A(chǔ)
擄C/W
Conditions
Tj=25擄C, I
F
=5A, per element
Tj=25擄C, V
R
=V
RM
, per element
Tj=150擄C
,
V
R
=V
RM,
per element
Junction to Case
Ta 鈥?I
F(AV)
Derating
10.0
Average Forward Current I
F(AV)
(A)
100
V
F
鈥?I
F
Characteristics
(Typical)
80
I
FSM
(A)
I
FSM
Rating
I
FSM
(A)
Forward Current I
F
(A)
8.0
20ms
10
Peak Forward Surge Current
2.0
60
6.0
1
Ta =150擄C
100擄C
60擄C
25擄C
0.5
1.0
1.5
Forward Voltage V
F
(V)
40
4.0
2.0
0.1
20
0
0
25 40 50
75
100
125
Ambient Temperature Ta (潞C)
150
0.01
0
0
1
5
10
Overcurrent Cycles
50
External dimensions
(Unit: mm)
Flammability:
UL94V-0 or equivalent
C3
25
蠁
3.2
鹵
0.1
4.6
3.6
+
4-1.0
7.5
7.5
鈥?/div>
9.5
13
0.7
7.5
17.5
2.7
鹵
0.1
15.0
Weight: 4.05g
1
