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RB751S40T1/D Datasheet

  • RB751S40T1/D

  • RB751S40T1

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RB751S40T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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http://onsemi.com
Extremely Fast Switching Speed
Extremely Low Forward Voltage - 0.28 Volts (Typ) @ I
F
= 1 mAdc
Low Reverse Current
Lead-Free Plating
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Reverse Voltage
Electrostatic Discharge
Symbol
V
RM
V
R
E
SD
Value
40
30
Unit
V
Vdc
1
2
HBM Class: 1C
MM Class: A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR - 5 Board,
(Note 1) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
1. FR - 5 Minimum Pad
Symbol
P
D
Max
200
1.57
R
qJA
T
J
, T
stg
635
- 55 to
+150
Unit
mW
mW/擄C
擄C/W
擄C
5E
d
SOD - 523
CASE 502
PLASTIC
MARKING DIAGRAM
5E
d
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
RB751S40T1
RB751S40T5
Package
SOD - 523
SOD - 523
Shipping
4 mm Pitch
4000/Tape & Reel
2 mm Pitch
8000/Tape & Reel
漏
Semiconductor Components Industries, LLC, 2003
1
July, 2003 - Rev. 1
Publication Order Number:
RB751S40T1/D

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