RB558W
Diodes
Schottky barrier diode
RB558W
Applications
Low current rectification
External dimensions
(Unit : mm)
1.6鹵 0.2
0.3鹵0.1
銆€銆€銆€ 0.05
(3)
0.15鹵 0.05
Land size figure
(Unit : mm)
0.5 0.5
0.7
Features
1) Ultra Small power mold type.
(EMD3)
2) Low V
F
3) High reliability.
1.6鹵0.1
0.8鹵0.1
0.2鹵0.1
銆€銆€-0.05
(2)
0.5
0.5
1.0鹵 0.1
(1)
0.55鹵 0.1
0.7鹵 0.1
0.4鹵0.1
0.1Min.
0.7
0錕?frac12;錕?0.1
0.7
0.6
EMD3
0.6
0.7鹵0.1
0.15
Construction
Silicon epitaxial planar
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications
(Unit : mm)
4.0鹵0.1
2.0鹵0.05
蠁1.55鹵0.1
銆€銆€銆€銆€銆€ 0
1.75鹵0.1
0.3鹵0.1
0錕?frac12;錕?.1
Structure
3.5鹵0.05
8.0鹵0.2
1.8鹵0.1
1.8鹵0.1
4.0鹵0.1
2.0鹵0.05
蠁1.1鹵0.1
0.9鹵0.2
Absolute maximum ratings
(Ta=25擄C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz銉?cyc) (*1)
Junction temperature
Storage temperature
(*1)Per chip
Electrical characteristics
(Ta=25擄C)
Parameter
Sym bol
Symbol
V
R
Io
I
FSM
Tj
Tstg
Limits
30
100
500
125
-40 to +125
5.5鹵0.2
Unit
V
mA
mA
鈩?/div>
鈩?/div>
Min.
-
-
-
Typ.
-
-
-
Max.
0.35
0.49
10
Unit
V
V
碌A
Conditions
I
F
=10mA
I
F
=100mA
V
R
=10V
Forward voltage
Reverse current
V
F
1
V
F
2
I
R
2.4鹵0.1
1.3
1/3
1
2
3
4
