RB521G-30
Diodes
Schottky barrier diode
RB521G-30
Application
Rectifying small power
External dimensions
(Units : mm)
1.0鹵0.05
1.4鹵0.05
Features
1) Ultra small mold type. (VMD2)
2) High reliability
0.6鹵0.05
0.27鹵0.03
CATHODE MARK
0.13鹵0.03
F
Construction
Silicon epitaxial planer
0.5鹵0.05
ROHM : VMD2
EIAJ :
JEDEC :
Absolute maximum ratings
(Ta=25擄C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
鈭?/div>
Junction temperature
Storage temperature
鈭?/div>
60Hz, 1cyc.
Symbol
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
100
1
125
鈭?0~+125
Unit
V
mA
A
擄C
擄C
Electrical characteristics
(Ta=25擄C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
Max.
0.350
10
Unit
V
碌A(chǔ)
I
F
=10mA
V
R
=10V
Conditions
鈭?/div>
Please pay attention to static electricity when handling.
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