RB450F
Diodes
Schottky barrier diode
RB450F
!
Applications
Low current rectification
!
External dimensions
(Units : mm)
2.0
鹵
0.2
1.3
鹵
0.1
0.9
鹵
0.1
0.3
0.6
0.3
鹵
0.1
0.15
鹵
0.05
(All leads have the same dimensions)
!
Construction
Silicon epitaxial planar
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
!
Circuit
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
鈭?/div>
Junction temperature
Storage temperature
鈭?0Hz
for 1
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
45
40
0.1
1
125
鈭?0
~
+125
Unit
V
V
A
A
擄C
擄C
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
I
R
C
T
Min.
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
6.0
Max.
0.45
1
鈭?/div>
Unit
V
碌A
pF
I
F
=10mA
V
R
=10V
V
R
=10V,
f=1MHz
Conditions
Note) ESD sensitive product handling required.
0.1Min.
3F
!
Features
1) Small surface mounting type. (UMD3)
2) Low I
R
. (I
R
=80nA Typ.)
3) High reliability.
0.65
0.65
1.25
鹵
0.1
2.1
鹵
0.1
0~0.1
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