RB400VA-50
Diodes
Schottky barrier diode
RB400VA-50
Applications
General rectification
External dimensions
(Unit : mm)
0.17鹵0.1
銆€銆€銆€銆€0.05
1.3鹵0.05
CATHODE銆€MARK
Land size figure
(Unit : mm)
1.1
Features
1) Small mold type. (TUMD2)
2) Low I
F
, Low I
R
.
3) High reliability.
1.9鹵0.1
2.5鹵0.2
0錕?frac12;錕?.1
0.8鹵0.05
0.6鹵0.1
銆€銆€銆€0.05
1.3鹵0.1
0.04
0.6鹵0.1
0.05
0.47
TUMD2
1.45鹵0.1
0錕?frac12;錕?.1
0.15鹵0.03
Structure
Construction
Silicon epitaxial planar
250
0.03
Taping specifications
(Unit : mm)
4.0鹵0.1
2.0錕斤拷0.05
1.75鹵0.1
0.3鹵0.04
ROHM : TUMD2
dot (year w eek factory)+day
0.4鹵0.1
蠁1.55鹵0.1
銆€銆€銆€銆€銆€ 0.05
0.25鹵0.05
3.5鹵0.05
8.0鹵0.2
1.43鹵0.05
4.0鹵0.1
蠁1.0鹵0.2
銆€銆€銆€銆€銆€0
2.8鹵0.05
2.8鹵0.05
Absolute maximum ratings
(Ta=25擄C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
錛?/div>
60Hz
銉?/div>
1cyc
錛?/div>
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
50
40
0.5
3
125
-40 to +125
Unit
V
V
A
A
鈩?/div>
鈩?/div>
Electrical characteristics
(Ta=25擄C)
Parameter
Forward voltage
R everse current
C apacitance between terminal
Symbol
V
F
1
I
R
1
I
R
2
Ct1
Ct2
Min.
-
-
-
-
-
Typ.
-
-
-
125
20
Max.
0.55
30
50
-
-
Unit
V
碌A
碌A
pF
pF
I
F
=500mA
V
R
=10V
V
R
=30V
V
R
=0V , f=1MHz
V
R
=10V , f=1MHz
Conditions
0.8 0.5
0.9鹵0.08
2.0
1/3
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