RB053L-30
Diodes
Schottky barrier diode
RB053L-30
Applications
High frequency rectification
For switching power supply
External dimensions
(Units : mm)
1.5
鹵
0.2
CATHODE MARK
Features
1) Compact power mold type. (PMDS)
2) Ultra low V
F
/ Low I
R
.
3) V
RM
=30V guaranteed.
4.5
鹵
0.2
1.2
鹵
0.3
5
6
0.1
+0.02
鈭?.1
2.6
鹵
0.2
2.0
鹵
0.2
Construction
Silicon epitaxial planar
ROHM : PMDS
EIAJ :
鈭?/div>
JEDEC : SOD-106
, 路路路路路
Date of manufacture EX. 1999.12
鈫?/div>
9, C
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
鈭?/div>
Peak forward surge current
(60Hz
路
1
)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
30
3.0
70
125
鈭?0
~
+125
Unit
V
V
A
A
擄C
擄C
鈭桾
C
Max. = 90擄C when mounted on alumina PCBs.
Electrical characteristics
(Ta = 25擄C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
1
I
R
2
Min.
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
Max.
0.42
90
200
Unit
V
碌A
碌A
I
F
=3.0A
V
R
=15V
V
R
=30V
Conditions
5.0
鹵
0.3
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