GaAs (Cs) Photocathode, Wide Spectral Response, 51 mm (2") Diameter
Head-on Type for Photon Counting, Low Dark Counts, Excellent P.H.D.
FEATURES
G
Wide Spectral Response ............. 160 nm to 930 nm
G
High Quantum Efficiency in Near IR ... 14 % at 632.8 nm
G
Fast Rise Time ................................. 3.0 ns at 1500 V
G
Excellent Single Photoelectron
Pulse Height Distribution
........................... Peak to Valley Ratio 2.3 (at -20
擄C)
G
Low Dark Counts ..................... 20 s
-1
Typ. (at -20
擄C)
APPLICATIONS
G
Raman Spectroscopy
G
Fluorescent Spectroscopy
G
Astrophysical Measurement
G
Laser Detection
Hamamatsu R943-02 is a 51 mm (2") diameter head-on type photomultiplier tube having GaAs (Cs) photocathode and synthetic
silica window. The combination of the GaAs photocathode and the synthetic silica window allows high sensitivity over a wide spectral
range from UV to IR (160 nm to 930 nm).
The R943-02 is selected for photon counting and features low dark counts and excellent pulse height distribution (PHD) of single
photoelectrons.
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Mode
Window Material
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
SuitabIe Socket
Weight
Operating Ambient Temperature
A
Storage Temperature
Description / Value
160 to 930
300 to 850
GaAs(Cs)
10
脳
10
Opaque
Synthetic silica glass
Cu-BeO
Linear focused
10
Approx. 2.7
Approx. 5.0
21-pin glass base
E678鈥?1C (supplied)
E678鈥?1D (sold separately)
93
-30 to +50
-80 to +50
Unit
nm
nm
鈥?/div>
mm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
pF
pF
鈥?/div>
鈥?/div>
g
擄C
擄C
Figure 1: Typical Spectral Response
10
2
TPMHB0281EA
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
10
1
QUANTUM
EFFICIENCY
CATHODE
RADIANT
SENSITIVITY
10
0
10-
1
10-
2
200
400
600
800
1000
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 漏2003 Hamamatsu Photonics K.K.
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