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R8520U-00-C12 Datasheet

  • R8520U-00-C12

  • POSITION SENSITIVE PHOTOMULTIPLIER TUBES

  • 6頁

  • HAMAMATSU

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POSITION SENSITIVE
PHOTOMULTIPLIER TUBES
PRELIMINARY DATA
OCT. 2001
R8520-00-C12
R8520U-00-C12
FEATURES
I
6 (X) + 6 (Y) Cross Plate Anode
I
Flangeless Type
I
High Speed Response
APPLICATIONS
I
PET (Positron Emission Tomography)
I
Compact Gamma Camera
I
Scintillation Mammography
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Material
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Anode
Weight
Suitable Socket
Description
300 to 650
420
Bialkali
22
脳
22
Borosilicate glass
Metal channel dynode
11
6 (X) + 6 (Y) Cross plate anode
Approx. 28
E678-32B (sold separately)
Unit
nm
nm
鈥?/div>
mm
2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
g
鈥?/div>
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Average Anode Current in Total
Value
1000
0.1
Unit
V dc
mA
CHARACTERISTICS (at 25
擄C)
Cathode Sensitivity
Parameter
Luminous (2856 K)
Blue Sensitivity Index (CS 5-58)
Luminous (2856 K)
Min.
50
7
15
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
70
8.5
70
1
脳
10
6
2
1.4
Max.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
鈥?/div>
Unit
碌A(chǔ)/lm
鈥?/div>
A/lm
鈥?/div>
nA
ns
Anode Sensitivity
Gain
Anode Dark Current in Total of Anodes
(after 30 min storage in darkness)
Time Response
Anode Pulse Rise Time
NOTE:
Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
K
0.5
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11
P
1
1
1
1
0.5
1.5
2
1
1
1
1
1
Supply Voltage: 800 V dc, K: Cathode, G: Grid, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 漏2001 Hamamatsu Photonics K.K.

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