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R7110U-40 Datasheet

  • R7110U-40

  • COMPACT HYBRID PHOTO-DETECTOR

  • 2頁

  • HAMAMATSU

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PRELIMINARY DATA
SEPT. 2000
COMPACT HYBRID
PHOTO-DETECTOR
with Si-Avalanche Diode Target
R7110U-40
APPLICATIONS
q
High Energy Physics
q
Medical
q
Other High Precision Measurements
FEATURES
q
High Q.E. from 450 to 650 nm
q
Low Excess Noise
q
High Gain
q
Operable in High Magnetic Fields
q
Low Hysteresis
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Material
Photocathode
Minimum Effective Area
a
Window Material
Target
Suitable Socket
Description/Value
350 to 720
450 to 650
GaAsP(Cs)
5
Brosilicate glass
3 mm Single-element Electron
Bombarded Si-Avalanche Diode
E678-12M (supplied)
Unit
nm
nm
鈥?/div>
mm dia.
鈥?/div>
鈥?/div>
鈥?/div>
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Avalanche Diode Reverse Bias Voltage
Ambient Temperature
Value
-8500
155
b
-40 to +50
Unit
Vdc
V
擄C
CHARACTERISTICS (at 25
擄C)
Cathode Sensitivity
Gain
c
Time
Response
c
Rise Time
Fall Time
Width
Leakage Current
d
Capacitance
d
Parameter
Luminous (2856K)
Radiant at 550 nm
QE at 550 nm
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
400
200
45
4
脳
10
4
1.3
15
5
鈥?/div>
120
Max.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
鈥?/div>
Unit
碌A(chǔ)/lm
mA/W
%
鈥?/div>
ns
ns
ns
nA
pF
Diode (Target)
NOTE:
aWithout
magnetic fields
bat
25
擄C
cPhotocathode
Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: Approx.145 V
dAvalanche
Diode Reverse Bias Voltage: Approx.145 V
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
漏
2000 Hamamatsu Photonics K.K.

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