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R7056 Datasheet

  • R7056

  • PHOTOMULTIPLIER TUBES

  • 4頁

  • HAMAMATSU

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PHOTOMULTIPLIER TUBES
R6427, R7056
Fast time response, For scintillation counting and
high energy physics, R6427: Borosilicate glass, R7056: UV glass
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Material
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Base
Suitable Socket
R6427
300 to 650
R7056
185 to 650
Unit
nm
nm
鈥?/div>
mm dia.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
420
Bialkali
25
Borosilicate glass
UV glass
Linear focused
10
14-pin glass base
E678-14C (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Ambient Temperature
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
2000
350
0.2
-80 to +50
Unit
Vdc
Vdc
mA
擄C
CHARACTERISTICS (at 25擄C)
Parameter
Luminous (2856K)
Radiant at 420nm
Blue (CS-5-58 filter)
Luminous (2856K)
Radiant at 420nm
Min.
60
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
95
88
11.0
475
4.4
10
5
5
10
6
10
1.7
16
500
10 (100)
Max.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
200
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Unit
碌A(chǔ)/lm
mA/W
碌A(chǔ)/lm-b
A/lm
A/W
鈥?/div>
nA
ns
ns
ps
mA
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (FWHM)
Pulse Linearity (at
鹵2%
deviation)
NOTE
: Anode characteristics are measured with the voltage distribution ratio A shown below.
(
) : Pulse linearity is measured with the voltage distribution ratio B shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
Electrodes
P
Ratio A
4
1
1.5
1
1
1
1
1
1
1
1
Ratio B
(Tapered)
4
1
1.5
1
1
1
1.2
1.5
2
3.3
3
Capacitors
(碌F)
0.01 0.02 0.02 0.04 0.06
Supply Voltage: 1500Vdc, K: Cathode, DY: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1999 Hamamatsu Photonics K.K.

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