PHOTOMULTlPLlER TUBE
R580
For Scintillation Counting and High Energy Physics
38mm(1-1/2 lnch) Diameter, 10鈥搒tage, Bialkali Photocathode, Head鈥揙n Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Anode to Last Dynode
Direct Interelectrode
Capacitances
Anode to All Other Electrodes
Base
SuitabIe Socket
Description/Value
300 to 650
420
Bialkali
34
Borosilicate glass
Linear focused
10
3
7
JEDEC No.B12鈥?3
E678鈥?2A(supplied)
Unit
nm
nm
mm dia.
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Avarage Anode Current
Ambient Temperature
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
1750
350
0.1
-30 to +50
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25
)
Min.
70
Max.
Unit
A/lm
mA/W
A/lm 鈥揵
%
A/lm
nA
ns
ns
ns
mA
Typ.
90
88
Cathode Sensitivity
9
11
27
Anode Sensitivity
10
100
Gain
1. 1 1 0
6
Anode Dark Current (after 30min. storage in darkness)
3
Anode Pulse Rise Time
2.7
Electron Transit Time
Time Response
37
Transit Time Spread (FWHM)
4.5
Pulse Linearity ( 2% deviation)
150
NOTE:
Anode characteristics are measured with the voItage distribution ratio shown below.
Parameter
Luminous (2856K)
Radiant at 420nm
Blue (CS 5 58 filter)
Quantum Efficiency at 420nm
Luminous (2856K)
20
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
Electrodes
Ratio
2
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250Vdc, K : Cathode,
Dy : Dynode, P : Anode
P
SPECIAL VOLTAGE DlSTRlBUTlON RATlO FOR PULSE LINEARITY MEASUREMENT
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
Electrodes
2
1
1
1
1
1
1.2
1.5
2.2
3.6
3
Ratio
Parallel Capacitors in F
0.01
0.02
0.04
0.06
SuppIy Voltage :1500Vdc
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
漏
1999 Hamamatsu Photonics K.K.
1
2
