28 mm (1-1/8 Inch) Transmission Mode S鈥? Photocathode, Side鈥搊n Type
FEATURES
G
Wide Photocathode
G
High Infrared Sensitivity
G
Excellent Spatial Uniformity
G
Fast Time Response
APPLICATIONS
G
Near Infrared Spectrophotometer
G
Raman Spectrophotometer
G
Photo Luminescence Measurement
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area (H
脳
W)
Window Material
Dynode
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
SuitabIe Socket
Applicable Socket Assembly
Operating Ambient Temperature
Storage Temperature
Description
400 to 1200
800
Ag-O-Cs
16
脳
18
Borosilicate glass
Circular-cage
9
1.2
3.4
11-pin base
JEDEC No. B11-88
E678鈥?1A (sold separately)
E717-63 (sold separately)
-30 to +50
-30 to +50
Unit
nm
nm
鈥?/div>
mm
鈥?/div>
鈥?/div>
鈥?/div>
pF
pF
鈥?/div>
鈥?/div>
鈥?/div>
擄C
擄C
Figure 1: Electron Trajectories
LIGHT
PHOTOELECTRONS
PHOTOCATHODE
GLASS
BULB
2nd DYNODE
FOCUSING
ELECTRODES
1st DYNODE
3rd DYNODE
TPMSC0003EB
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 漏2003 Hamamatsu Photonics K.K.