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R4220P Datasheet

  • R4220P

  • PHOTOMULTlPLlER TUBES

  • 4頁

  • HAMAMATSU

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PHOTOMULTlPLlER TUBES
R4220
R4220P(For Photon Counting)
Very High Cathode Sensitivity with Low Noise Photocathode
FEATURES
Spectral Response ................................... 185 to 710 nm
High Cathode Sensitivity
Luminous ...................................................... 100 A/lm
Radiant at 410nm ............................................ 70 mA/W
High Anode Sensitivity (at 1000V)
Luminous ....................................................... 1200A/lm
Radiant at 410nm ..................................... 8.4 10
5
A/W
Low Dark Current .................................................... 0.2nA
Low Dark Counts (R4220P) ................................... 10 cps
Hamamatsu R4220 features extremely high cathode sen-
sitivity, high Gain, and low dark current.
Variant tube (R4220P) specially selected for photon
counting application is also available.
The R4220 is useful for fluorescence, chemilumines-
cence, Raman spectroscopy and low light level detec-
tion.
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
Weight
SuitabIe Socket
SuitabIe Socket Assembly
Figure 1:
Typical Spectral Response
Description/Value Unit
185 to 710
410
Low noise bialkali
8 24
UV glass
Low noise bialkali
Circular-cage
9
4
6
11-pin base
JEDEC No. B11-88
45
E678鈥?1A (option)
E717鈥?1 (option)
0.01
100
200
300
400
500
600
700
800
TPMSB0010EA
100
nm
nm
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
mm
10
CATHODE
RADIANT
SENSITIVITY
1
QUANTUM
EFFICIENCY
pF
pF
0.1
g
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein.
1994 Hamamatsu Photonics K.K.

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