PHOTOMULTlPLlER TUBE
R3886
Ruggedized, 38mm(1鈥?/2 Inch) Diameter, Bialkali Photocathode
10鈥揝tage, Circular鈥揅age Dynode, Head鈥揙n Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Anode to Last Dynode
Direct Interelectrode
Capacitances
Anode to All Other Electrodes
Base
SuitabIe Socket
Description/Value
300 to 650
420 50
Bialkali
34
Borosilicate glass
Circular鈥揷age
10
3
4
12鈥損in base JEDEC No.B12鈥?3
E678鈥?2A (supplied)
Unit
nm
nm
mm dia.
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Avarage Anode Current
Value
1250
250
0.1
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25
)
Min.
70
9
10
Typ.
90
85
10.5
26
45
4.3 10
4
5.0 10
5
3
2.5
32
2.2
Max.
Unit
A/lm
mA/W
A/lm b
%
A/lm
A/W
nA
ns
ns
ns
Cathode Sensitivity
Anode Sensitivity
Parameter
Luminous (2856K)
Radiant at 420nm
Blue (CS 5 58 filter)
Quantum Efficiency at 390nm
Luminous (2856K)
Radiant at 420nm
Gain
Anode Dark Current (after 30min. storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (FWHM)
5
NOTE:
Anode characteristics are measured with the voItage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K
Dy1
Dy2
Dy3
Electrodes
Ratio
2
1
1
SuppIy Voltage : 1000Vdc,
K : Cathode,
Dy4
Dy5
Dy6
1
1
P : Anode
Dy7
1
Dy8
1
Dy9
1
Dy10
1
P
1
1
Dy : Dynode,
ENVIRONMENTAL TESTING
Shoch
................................
...........................
100g's, 11
1ms, 3 impact shocks per direction (6 directions)
Vibration
20g's, 50 to 2000Hz, 1 oct per minute, 3 sweeps per axis (3 axes)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
漏
1994 Hamamatsu Photonics K.K.
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