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R3810P Datasheet

  • R3810P

  • SUPER COMPACT PHOTOMULTIPLIER TUBE

  • 2頁

  • HAMAMATSU

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SUPER COMPACT
PHOTOMULTIPLIER TUBE
R3810P
For Single Photon Counting, Dark Counts 5cps Typ. at 25擄C
13mm (1/2 Inch) Diameter, 9-stage, Bialkali Photocathode, Side-On Type
185 to 650nm Spectral Response, General Purpose Variant of R3810
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Material
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Direct Interelectrode
Anode to Last Dynode
Capacitances
Anode to All Other Electrodes
Base
Weight
Suitable Socket
Description/Value
185 to 650
340
Sb-Cs
3
脳
4
UV glass
Circular-cage
9
1.7
2.0
11-pin glass base
3
E678-11H
Unit
nm
nm
鈥?/div>
mm
鈥?/div>
鈥?/div>
鈥?/div>
pF
pF
鈥?/div>
g
鈥?/div>
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Ambient Temperature
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
1250
150
0.01
-80 to +50
Unit
Vdc
mA
擄C
CHARACTERISTICS (at 25擄C)
Cathode Sensitivity
Parameter
Luminous (2856K)
Blue (CS No. 5-58 filter)
Luminous (2856K)
Min.
20
鈥?/div>
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
40
5.0
300
7.5
脳
10
6
5
0.1
1.4
15
Max.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
5
鈥?/div>
鈥?/div>
Unit
碌A(chǔ)/lm
碌A(chǔ)/lm-b
A/lm
鈥?/div>
cps
nA
ns
Anode Sensitivity
Gain
Dark Counts *
Anode Dark Current (after 30min. storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
* Measured at the voltage that is set at the gain to be 1
脳
10
6
.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrode
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
Ratio
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
漏
1998 Hamamatsu Photonics K.K.

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