PHOTOMULTlPLlER TUBES
R3310-02, R4330-02
InGaAs (Cs) Photocathode, Wide Spectral Response, 51mm (2") Dia., Head-on Type
For Photon Counting : Low Dark Counts, Excellent P.H.D.
APPLICATIONS
Raman Spectroscopy
Fluorescent Spectroscopy
Astrophysical Measurement
Laser Detection
FEATURES
Wide Spectral Response
R3310-02 ........................................... 300 to 1040nm
R4330-02 ............................................160 to 1040nm
High Quantum Efficiency in IR ........... 0.25% at 1 m
Fast Rise Time ...................................... 3.0ns at 1500V
Excellent Single Photoelectron
Pulse Height Distribution
........................... Peak to Valley Ratio 2.3 (at 鈥?0 )
Low Dark Counts ....................... 30cps Typ. (at 鈥?0 )
Hamamatsu R3310-02 and R4330-02 are 51mm (2") diameter head-on type photomultiplier tubes having InGaAs (Cs) photocath-
odes, and linear focused CuBeO dynodes. The InGaAs (Cs) photocathode allows high sensitivity over a wide spectral range up to
1040nm.
The R3310-02 and the R4330-02 are selected for photon counting, and they feature low dark counts and excellent pulse height
distribution (PHD) of single photoelectrons.
GENERAL
Parameter
Spectral Response
R3310-02
R4330-02
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Mode
Window Material
R3310-02
R4330-02
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
SuitabIe Socket
Weight
R3310-02
R4330-02
Figure 1:
Typical Spectral Response
Description/Value
300 to 1040
160 to 1040
400
InGaAs(Cs)
10 10
Opaque
Borosilicate glass (K-free)
Synthetic silica glass
Cu-BeO
Linear Focused
10
Approx. 2
Approx. 3
21-pin Base
E678鈥?1C (Supplied)
E678鈥?1D (Option)
110
93
pF
pF
Unit
nm
nm
nm
TPMHB0051EA
10
2
R4330-02
CATHODE
RADIANT
SENSITIVITY
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
R3310-02
10
1
R4330-02
mm
R3310-02
10
0
QUANTUM
EFFICIENCY
10
鈥?
10
鈥?
100
300
500
700
900
1100
g
g
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein.
漏
1997 Hamamatsu Photonics K.K.
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