HIGH鈥揝PEED
PHOTON COUNTING
PHOTOMULTIPLIER TUBES
R3234鈥?1, R3235鈥?1
High鈥搒peed Photon Counting and Fluorescence Measurement
51mm(2 Inch) Diameter, 12鈥搒tage, Head鈥搊n Type
R3234鈥?1:Borosilicate Window (300 to 650nm)
R3235鈥?1:Synthetic Silica Window (160 to 650nm)
GENERAL
Parameter
R3234鈥?1
Spectral Response
R3235鈥?1
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
R3234鈥?1
Window Material
R3235鈥?1
Structure
Dynode
Number of Stages
Base
SuitabIe Socket
Description/Value
300 to 650
160 to 650
420
Bialkali
10
Borosilicate glass
Synthetic silica glass
Linear focused
12
20鈥損in base (JEDEC No. B20鈥?02)
E678鈥?0A (supplied)
Unit
nm
nm
nm
mm dia.
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Avarage Anode Current
Ambient Temperature
Value
2500
500
0.1
-30 to +50
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25擄C)
Cathode
Sensitivity
Parameter
Luminous (2856K)
Radiant at 420nm
Blue (CS 5鈥?8 filter)
Luminous (2856K)
Radiant at 420nm
Min.
60
Typ.
80
72
9.0
2000
2.0 10
6
2.5 10
7
1
50
1.3
28
0.45
Max.
Unit
A/lm
mA/W
A/lm b
A/lm
A/W
nA
cps
ns
ns
ns
Anode
Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)
Anode Dark Counts
Anode Pulse Rise Time
Time
Electron Transit Time
Response
Transit Time Spread (FWHM)
500
10
150
NOTE:
Anode characteristics are measured with the voItage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K
Dy1 Dy2
Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12
Electrodes
Ratio
4
1.2
1.8
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 2000Vdc,
K : Cathode, Dy : Dynode, P : Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
漏
1999 Hamamatsu Photonics K.K.
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