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Built-in power MOS FET suitable for applications with 12 V input and low output voltage
Built-in driver circuit which matches the power MOS FET
Built-in tri-state input function which can support a number of PWM controllers
VIN operating-voltage range: 16 V max
High-frequency operation (above 1 MHz) possible
Large average output current (35 A)
Achieve low power dissipation (About 5.6 W at 1 MHz, 25 A)
Controllable driver: Remote on/off
Built-in Schottky diode for bootstrapping
Low-side drive voltage can be independently set
Small package: QFN56 (8 mm
脳
8 mm
脳
0.8 mm)
Outline
VCIN BOOT
GH
VIN
56
Reg5V
Driver
Tab
High-side MOS
Tab
1
14
15
DISBL#
MOS FET Driver
VSWH
Low-side MOS Tab
PWM
43
CGND VLDRV
GL
PGND
42
28
29
(Bottom view)
QFN56 package 8 mm
脳
8 mm
Rev.5.00 Apr 10, 2006 page 1 of 13