High QE in Near IR Region Due to InGaAs (Cs) Photocathode
For Spectrophotometers with 185 to 1010 nm range,
Fluorescence and Laser Applications and Photon Counting (R2658P)
in the Near Infrared Region, etc.
FEATURES
High QE in Near IR Region ............................... QE 0.13% at 1
碌m
Wide Wavelength Range ....................................... 185 to 1010 nm
Low Dark Current .......................................... 1 nA at 1250 V (Typ.)
The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-on
photomultiplier tubes using a newly developed InGaAs semiconductor
photocathode.
The InGaAs photocathode is sensitive from UV to near IR radiations
(as long as over 1010 nm) longer than wavelength limit of GaAs photo-
cathode, and yet offers low dark current. The dark current is 2 orders
lower than the commercial S-1 photocathode. Therefore, they are well
suited for low light detection in the near IR region including fluores-
cence lifetime measurements. Time response, gain, and dimensions
are identical with the conventional 28 mm (1-1/8 inch) diameter side-on
tubes with a GaAs photocathode.
The R2658P is a photon counting version of the R2658 with low dark
counts.
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Secondary Emitting Surface
Dynode
Direct
Interelectrode
Capacitances
Figure 1: Typical Spectral Response
Description/Value Unit
185 to 1010
400
InGaAs (Cs)
3
脳
12
UV glass
Cu-BeO
Circular-cage
9
Approx. 4
Approx. 6
11-pin base
JEDEC No. B11-88
Approx. 45
E678-11A
E717-63
nm
鈥?/div>
mm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
pF
pF
鈥?/div>
g
鈥?/div>
鈥?/div>
0.01
100 200 300 400 500 600 700 800 900 1000 1100
TPMSB0150EA
100
CATHODE
RADIANT SENSITIVITY
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
nm
10
Window Material
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
QUANTUM
EFFICIENCY
1
Base
Weight
Suitable Socket (Option)
Suitable Socket Assembly (Option)
0.1
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1
2
3
4
