For Scintillation Counting and High Energy Physics
51 mm (2 Inch) Diameter, Fast Time Response,
Bialkali Photocathode, 10鈥搒tage, Head鈥搊n Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Base
Operating Ambient Temperature
Storage Temperature
SuitabIe Socket
Description/Value
300 to 650
420
Bialkali
46
Borosilicate glass
Linear focused
10
14鈥損in base JEDEC No. B14鈥?8
-30 to +50
-30 to +50
E678鈥?4W (Sold Separately)
Unit
nm
nm
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mm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
擄C
擄C
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MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
1600
350
0.1
Unit
V
V
mA
CHARACTERISTlCS (at 25
擄C)
Min.
Typ.
Max.
鈥?/div>
60
90
鈥?/div>
鈥?/div>
10.5
Cathode Sensitivity
鈥?/div>
鈥?/div>
85
鈥?/div>
鈥?/div>
26
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20
90
Anode Sensitivity
4
鈥?/div>
鈥?/div>
8.5
脳
10
6
Gain
1.0
脳
10
鈥?/div>
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Anode Dark Current (after 30 minutes storage in darkness)
5
20
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Anode Pulse Rise Time
3.4
鈥?/div>
鈥?/div>
Time Response
Transit Time Spread (FWHM)
3.6
鈥?/div>
鈥?/div>
Pulse Linearity (at
鹵
2 % Deviation)*
150
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NOTE:
Anode characteristics are measured with the voItage distribution ratio "A" except for Pulse Linearity.
* Measured with the special voltage distribution ratio "B".
Parameter
Luminous (2856 K)
Blue Sensitivity Index (CS 5鈥?8)
Radiant at 420 nm
Quantum Efficiency at 420 nm
Luminous (2856 K)
Radiant at 420 nm
Unit
碌A(chǔ)/lm
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mA/W
%
A/W
A/W
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nA
ns
ns
mA
VOLTAGE DlSTRlBUTlON RATlO "A"
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Electrodes
Ratio
2
1
1
1
1
1
1
1
1
SuppIy Voltage: 1250 V,
K: Cathode, Dy: Dynode, P: Anode
Dy9
1
Dy10
1
P
SPECIAL VOLTAGE DlSTRlBUTlON RATlO "B" FOR HIGH PULSE LINEARITY
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
Electrodes
Ratio
2
1
1
1
1
1
1.2
1.5
2.2
3.6
3
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.01
0.01
0.01
0.01
0.02
Capacitors(碌F)
SuppIy Voltage: 1500 V,
K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 漏2006 Hamamatsu Photonics K.K.
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