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R2078 Datasheet

  • R2078

  • PHOTOMULTIPLIER TUBE

  • 29.28KB

  • 2頁(yè)

  • HAMAMATSU

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PHOTOMULTIPLIER TUBE
R2078
Extremely Improved Solar Blind Photocathode for Aerospace and
General Photometric Applications, 25mm (1 Inch) Diameter,
Ruggedized Low Profile Tube, Cs-Te Photocathode, 10-Stage, Head-on
FEATURES
High Quantum Efficiency ..................................... 14% at 254nm Typ.
Ruggedized, Low Profile Structure ..................... 20g's vibration
43mm in bulb length
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Material
Photocathode
Minimum Useful Diameter
Window Material
Structure
Dynode
Number of Stages
Base (temporary)
Suitable Socket
Description/Value
160 to 320
240
Cs-Te
21
Fused silica
Circular cage
10
12-pin base JEDEC No. B12-13
E678-12A (supplied)
Unit
nm
nm
鈥?/div>
mm dia.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
2000
300
0.015
Unit
Vdc
Vdc
mA
CHARACTERISTICS (at 25擄C)
Cathode Sensitivity
Anode Sensitivity
Parameter
Radiant at 254nm
Radiant at 254nm
Radiant at 365nm
Radiant at 550nm
Min.
20
2.0
脳
10
3
鈥?/div>
鈥?/div>
1.0
脳
10
5
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
29
1.5
脳
10
4
1.5
1.6
脳
10
-2
5.0
脳
10
5
15
1.5
14
Max.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
鈥?/div>
鈥?/div>
Unit
mA/W
A/W
A/W
A/W
鈥?/div>
pA
ns
ns
Gain
Anode Dark Current (after 30 min. storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
Ratio
3
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
漏
1998 Hamamatsu Photonics K.K.

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