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R1RW0416DSB-2PR Datasheet

  • R1RW0416DSB-2PR

  • 4M High Speed SRAM (256-kword x 16-bit)

  • 100.47KB

  • 16頁

  • RENESAS

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R1RW0416D Series
4M High Speed SRAM (256-kword
脳
16-bit)
REJ03C0107-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword
脳
16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416D
is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Features
鈥?/div>
Single 3.3 V supply: 3.3 V
鹵
0.3 V
鈥?/div>
Access time: 12 ns (max)
鈥?/div>
Completely static memory
錚?/div>
No clock or timing strobe required
鈥?/div>
Equal access and cycle times
鈥?/div>
Directly TTL compatible
錚?/div>
All inputs and outputs
鈥?/div>
Operating current: 130 mA (max)
鈥?/div>
TTL standby current: 40 mA (max)
鈥?/div>
CMOS standby current : 5 mA (max)
: 0.8 mA (max) (L-version)
鈥?/div>
Data retention current: 0.4 mA (max) (L-version)
鈥?/div>
Data retention voltage: 2.0 V (min) (L-version)
鈥?/div>
Center V
CC
and V
SS
type pin out
Rev.1.00, Mar.12.2004, page 1 of 14

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