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R1LV1616HBG-I Datasheet

  • R1LV1616HBG-I

  • Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)

  • 15頁

  • RENESAS

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R1LV1616HBG-I Series
Wide Temperature Range Version
16 M SRAM (1-Mword
脳
16-bit)
REJ03C0263-0100
Rev.1.00
Sep.21.2005
Description
The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword
脳
16-bit. R1LV1616HBG-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process technology (6-
transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.
Features
鈥?/div>
Single 3.0 V supply: 2.7 V to 3.6 V
鈥?/div>
Fast access time: 45/55 ns (max)
鈥?/div>
Power dissipation:
錚?/div>
Active: 9 mW/MHz (typ)
錚?/div>
Standby: 1.5
碌W
(typ)
鈥?/div>
Completely static memory.
錚?/div>
No clock or timing strobe required
鈥?/div>
Equal access and cycle times
鈥?/div>
Common data input and output.
錚?/div>
Three state output
鈥?/div>
Battery backup operation.
錚?/div>
2 chip selection for battery backup
鈥?/div>
Temperature range:
鈭?0
to +85擄C
Ordering Information
Type No.
R1LV1616HBG-4SI
R1LV1616HBG-5SI
Access time
45 ns
55 ns
Package
48-ball plastic FBGA with 0.75 mm ball pitch
PTBG0048HF (48FHJ)
Rev.1.00, Sep.21.2005, page 1 of 13

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