QST4
Transistors
Low frequency amplifier
QST4
Application
Low frequency amplifier
Driver
External dimensions
(Unit : mm)
2.8
1.6
(1)
(4) (5) (6)
0.4
Features
1) A collector current is large.
2) V
CE(sat)
: max.
鈭?50mV
At I
C
=鈭?.5A / I
B
=鈭?0mA
0.16
(3) (2)
Each lead has same dimensions
ROHM : TSMT6
QST4
Abbreviated symbol : T04
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
鈭?5
鈭?2
鈭?
鈭?
鈭?
500
1.25
150
鈭?5
to
+150
Unit
V
V
V
A
A
鈭?
mW
鈭?
W
鈭?
擄C
擄C
Equivalent circuit
(6)
(5)
(4)
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
(1)
(2)
(3)
鈭?
Single pulse, P
W
=1ms
鈭?
Each Termminal Mounted on a Recommended
鈭?
Mounted on a 25mm脳25mm脳
t
0.8mm Ceramic substrate
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
鈭?/div>
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
鈭?5
鈭?2
鈭?
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?20
鈭?/div>
280
30
Max.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?00
鈭?00
鈭?50
680
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
nA
mV
鈭?/div>
MHz
pF
0.85
2.9
Conditions
I
C
=鈭?0碌A(chǔ)
I
C
=鈭?mA
I
E
=鈭?0碌A(chǔ)
V
CB
=鈭?5V
V
EB
=鈭?V
I
C
=鈭?.5A,
I
B
=鈭?0mA
V
CE
=鈭?V,
I
C
=鈭?00mA
鈭?/div>
V
CE
=鈭?V,
I
E
=500mA,
f=100MHz
鈭?/div>
V
CB
=鈭?0V,
I
E
=0A,
f=1MHz
Rev.C
1/2
1
2
3
