QSD2030
PLASTIC SILICON PHOTODIODE
PACKAGE DIMENSIONS
0.195 (4.95)
FEATURES
鈥?PIN Photodiode
鈥?Package type: T-1 3/4 (5mm lens diameter)
鈥?Wide Reception Angle, 40擄
鈥?Package material and color: Clear epoxy
0.040 (1.02)
NOM
REFERENCE
SURFACE
0.305 (7.75)
鈥?High Sensitivity
鈥?Peak Sensitivity
= 880 nm
0.800 (20.3)
MIN
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of 鹵 .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.33
mW/擄C above 25擄C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16鈥?/div>
(1.6mm) minimum
from housing.
SCHEMATIC
CATHODE
ANODE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Reverse Breakdown Voltage
Power Dissipation
(1)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
BR
P
D
(T
A
=25擄C)
SYMBOL
PS
SR
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
100
Unit
擄C
擄C
擄C
擄C
V
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Forward Voltage
I
F
= 80 mA
Reverse Dark Current
V
R
= 20 V, E
e
= 0
Reverse Light Current
E
e
= 0.5 mW/cm
2
, V
R
= 5 V, = 950 nm
Capacitance
V
R
= 0, f = 1 MHz, E
e
= 0
Rise Time
V
R
= 5 V, R
L
= 50
Fall Time
= 950 nm
V
F
I
D
I
L
C
t
r
t
f
鈥?/div>
400
鈥?/div>
鈥?/div>
鈥?/div>
15
鈥?/div>
鈥?/div>
鈥?/div>
880
鈥?/div>
鹵20
1.3
鈥?/div>
25
60
5
5
鈥?/div>
1100
鈥?/div>
鈥?/div>
5
鈥?/div>
鈥?/div>
鈥?/div>
nm
nm
Deg.
V
nA
碌A(chǔ)
pF
ns
10/31/01
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