QSB320F
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.035 (0.9)
0.028 (0.7)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
FEATURES
0.043 (1.1)
0.020 (0.5)
COLLECTOR
0.024 (0.6)
0.016 (0.4)
SCHEMATIC
COLLECTOR
鈥?Surface Mount PLCC-2 Package
鈥?Wide Reception Angle, 120擄
0.007 (.18)
0.005 (.12)
鈥?High Sensitivity
鈥?Phototransistor Output
鈥?Matched Emitter: QEB421
EMITTER
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of 鹵 .010 (.25) on all non nominal dimensions
unless otherwise specified.
鈥?Daylight Filter
NOTES
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)
(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Power Dissipation
(1)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-F
V
CE
V
EC
I
C
P
D
Rating
-55 to +100
-55 to +100
260 for 10 sec
35
5
15
165
Unit
擄C
擄C
擄C
V
V
mA
mW
1. Derate power dissipation linearly
2.2 mW/擄C above 25擄C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4.
=
940 nm.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25擄C)
SYMBOL
PS
SR
MIN
TYP
MAX
UNITS
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
V
CE
= 25 V, E
e
= 0
I
C
= 1 mA
I
E
= 100 碌A(chǔ)
E
e
= 0.1 mW/cm
2(4)
, V
CE
= 5 V
E
e
= 0.5 mW/cm
2(4)
, I
C
= 0.05 mA
V
CC
= 5 V, R
L
= 100
I
C
= 1 mA
鈥?/div>
700
鈥?/div>
鈥?/div>
30
5
16
鈥?/div>
鈥?/div>
鈥?/div>
880
鈥?/div>
120
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
8
8
鈥?/div>
1000
鈥?/div>
200
鈥?/div>
鈥?/div>
鈥?/div>
0.3
鈥?/div>
鈥?/div>
nm
nm
Deg.
nA
V
V
碌A(chǔ)
V
碌s
碌s
I
D
BV
CEO
BV
ECO
I
C (ON)
V
CE (SAT)
t
r
t
f
錚?/div>
2001 Fairchild Semiconductor Corporation
DS300387
2/26/01
1 OF 3
www.fairchildsemi.com
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