QS6U22
Transistors
Small switching (鈭?0V,
鈭?.5A)
QS6U22
!
Features
1) The QS6U22 combines Pch MOSFET with a
Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(4V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
!
External dimensions
(Unit : mm)
TSMT6
1pin mark
(1)
2.8
1.6
(6)
0.4
(3)
0.16
(4)
Each lead has same dimensions
Abbreviated symbol : U22
!Applications
Load switch, DC / DC conversion
!
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
!
Equivalent circuit
(6)
(5)
(4)
!
Packaging specifications
Package
Type
QS6U22
Code
Basic ordering unit (pieces)
Taping
TR
3000
(1)
鈭?
0.85
鈭?
(2)
(3)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) N / C
(6) Cathode
鈭桝
protection diode has been in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
!
Absolute maximum ratings
(Ta=25擄C)
鈱㎝OSFET鈱?/div>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
鈱〥i鈱?/div>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
鈱㎝OSFET
AND Di鈱?/div>
Parameter
Total power dissipation
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch
Symbol
V
RM
V
R
I
F
I
FSM
Tj
Symbol
P
D
Tstg
Limits
鈭?0
鹵12
鹵1.5
鹵6.0
鈭?.75
鈭?.0
150
Limits
25
20
0.7
3.0
150
Limits
1.25
鈭?5
to
+150
Unit
V
V
A
A
A
A
擄C
Unit
V
V
A
A
擄C
Unit
W / Total
擄C
鈭?
鈭?
鈭?
鈭?
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
60Hz鈰?cyc.
鈭?
Total mounted on a ceramic board
2.9
(2)
(5)
1/3
1
2
3
4
