QS6M4
Transistors
Small switching
QS6M4
Features
1) The QS6M4 combines Pch Trench MOSFET with a
Nch Trench MOSFET in a single TSMT6 package.
2) Pch Trench MOSFET and Nch Trench MOSFET
have a low on-state resistance with a fast switching.
3) Pch Trench MOSFET is neucted a low voltage drive
(2.5V).
External dimensions
(Unit : mm)
TSMT6
1pin mark
(1)
2.8
1.6
(6)
0.4
(3)
0.16
(4)
Applications
Load switch, inverter
Each lead has same dimensions
Abbreviated symbol :
M04
Structure
Silicon P-channel MOS FET
Silicon N-channel MOS FET
Equivalent circuit
(6)
(5)
鈭?
(4)
0.85
2.9
(2)
(5)
Packaging specifications
Package
Type
QS6M4
Code
Basic ordering unit (pieces)
Taping
TR
3000
鈭?
鈭?
鈭?
(1)
(2)
(3)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
鈭?/div>
Pw鈮?0碌s, Duty cycle鈮?%
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Continuous
Pulsed
Continuous
Pulsed
Limits
Nchannel
Pchannel
30
鈭?0
12
鈭?2
鹵1.5
鹵1.5
鹵6.0
鹵6.0
0.8
鈭?.75
6.0
鈭?.0
1.25
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
擄C
擄C
鈭?/div>
鈭?/div>
Thermal resistance
(Ta=25擄C)
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
擄C
/ W
1/5
1
2
3
4
5
6
