QS6M3
Transistors
Small switching
QS6M3
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
External dimensions
(Unit : mm)
TSMT6
1pin mark
(1)
2.8
1.6
(6)
0.4
(3)
Each lead has same dimensions
Abbreviated symbol :
MO3
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Pulsed
Source current
Continuous
(Body diode)
Pulsed
Total power dissipation (T
C
=25擄C)
Channel temperature
Storage temperature
Drain current
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Mounted on a ceramic board
Equivalent circuit
Limits
Unit
Tr1 : Nch
Tr2 : Pch
30
鈭?0
V
12
鈭?2
V
鹵1.5
鹵1.5
A
鹵6.0
鹵6.0
A
鈭?
0.8
鈭?.75
A
6.0
鈭?.0
A
鈭?
1.25
1.25
W / Total
鈭?
150
150
擄C
鈭?5
to
+150 鈭?5
to
+150
擄C
(6)
(5)
(4)
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
鈭?
0.85
Application
Power switching, DC / DC converter.
0.16
(4)
鈭?
(1)
(2)
鈭?
(3)
2.9
(2)
(5)
鈭?
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
Thermal resistance
(Ta=25擄C)
Parameter
Channel to ambient
鈭?/div>
Mounted on a ceramic board
Symbol
Rth (ch-A)
Limits
100
Unit
擄C
/ W / Total
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