QS6J3
Transistors
Small switching (鈭?0V,
鈭?.5A)
QS6J3
Features
1) Two Pch MOSFET transistors in a single TSMT6
package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(2.5V).
External dimensions
(Unit : mm)
TSMT6
1pin mark
(1)
2.8
1.6
(6)
0.4
(3)
0.16
(4)
Each lead has same dimensions
Applications
Switch
Abbreviated symbol :
J03
Structure
Silicon P-channel MOSFET
Equivalent circuit
(6)
(5)
鈭?
(4)
Packaging specifications
Package
Type
QS6J3
Code
Basic ordering unit (pieces)
Taping
TR
3000
鈭?
鈭?
鈭?
(1)
(2)
(3)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Tr1
(2) Tr1
(3) Tr2
(4) Tr2
(5) Tr2
(6) Tr1
0.85
2.9
(2)
(5)
Source
Gate
Drain
Source
Gate
Drain
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits
鈭?0
鹵12
鹵1.5
鹵6.0
鈭?.75
鈭?.0
1.25
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W / Total
擄C
擄C
鈭?
鈭?
鈭?
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
鈭?/div>
Mounted on a ceramic board
Symbol
Rth (ch-a)
Limits
100
Unit
擄C
/ W / Total
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