QS6J1
Transistors
Small switching (鈭?0V,
鈭?.5A)
QS6J1
Features
1) Two Pch MOSFET transistors in a single TSMT6
package.
2) Pch Treueh MOSFET have a low on-state resistance
with a fast switching.
3) Nch Treueh MOSFET is reacted a low voltage drive
(2.5V).
External dimensions
(Unit : mm)
TSMT6
1pin mark
(1)
2.8
1.6
(6)
0.4
(3)
0.16
(4)
Applications
Switch
Each lead has same dimensions
Abbreviated symbol :
J01
Structure
Silicon P-channel MOSFET
Equivalent circuit
(6)
鈭?
(5)
鈭?
(4)
Packaging specifications
Package
Type
QS6J1
(1)
Taping
TR
3000
鈭?
(2)
鈭?
(3)
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
Code
Basic ordering unit (pieces)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits
鈭?0
+
12
鈭?/div>
+
1.5
鈭?/div>
+
6
鈭?/div>
鈭?.75
鈭?
1.25
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W / Total
C
C
鈭?
鈭?
鈭?
鈭?
Pw
<
10碌s, Duty cycle
<
1%
鈭?
Mounted on a ceramic board
鈭?/div>
鈭?/div>
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
擄C
/ W / Total
0.85
2.9
(2)
(5)
1/3
QS6J1相關(guān)型號(hào)PDF文件下載
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