QS5U26
Transistor
Small switching (鈭?0V,
鈭?.5A)
QS5U26
!
Features
1) The QS5U26 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(2.5V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!
External dimensions
(Units : mm)
2.8
TSMT5
0.4
(1)
1.6
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
(4)
0.95 0.95
1.9
2.9
(2)
(5)
0~0.1
0.3~0.6
Each lead has same dimensions
Abbreviated symbol : U26
!Applications
load switch, DC/DC conversion
!
Equivalent circuit
!
Structure
鈥ilicon P-channel MOS FET
鈥chottky Barrier DIODE
(5)
(4)
鈭?
!
Packaging specifications
Package
Type
QS5U26
Code
Basic ordering unit (pieces)
Taping
TR
3000
(1)
鈭?
ESD protection diode
鈭?
Body diode
鈭?
(2)
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
鈭?/div>
A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
!
Absolute maximum ratings
(Ta=25擄C)
<
MOSFET
>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch
Symbol
V
RM
V
R
I
F
I
FSM
Tj
Symbol
P
D
Tstg
Limits
鈭?0
鹵12
鹵1.5
鹵6.0
鈭?.75
鈭?.0
150
Limits
30
20
0.5
2.0
125
Limits
1.0
鈭?0~+125
Unit
V
V
A
A
鈭?
A
A
鈭?
擄C
Unit
V
V
A
A
鈭?
擄C
Unit
W/TOTAL
鈭?
擄C
<
Di
>
Channel temperature
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Parameter
Total power dissipatino
Range of strage temperature
<
MOSFET AND Di
>
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
60Hz
鈥?/div>
1cyc.
鈭?
Mounted on a ceramic board.
1.0MAX
0.16
0.85
0.7
1/3
1
2
3
4
