QS5U21
Transistor
Small switching (鈥?0V, 鈥?.5A)
QS5U21
Features
1) The QS5U21 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The Independently connected Schottky barrier diode
have a low forward voltate.
External dimensions
(Units : mm)
+
2.9
鈭?/div>
0.1
1.9
+
0.2
鈭?/div>
0.3 to 0.6
1.0MAX
+
0.85
鈭?/div>
0.1
0.7
+
0.1
鈭?/div>
0.95
0.95
(5)
+
2.8
鈭?/div>
0.2
+
1.6
鈭?/div>
0.2
0.1
(4)
0 to 0.1
(1)
0.4
+0.1
鈭?.05
(2)
(3)
0.16
+0.1
鈭?.06
Each lead has same dimensions
Applications
Load switch, DC/DC conversion
Abbreviated symbole : U21
Structure
Silicon P-channel MOSFET
Schottky Barrier DIODE
Equivalent circuit
(5)
(4)
鈭?
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
QS5U21
Taping
TR
3000
(1)
(2)
(3)
鈭?/div>
1
(1)ANODE
(2)SOURCE
(3)GATE
(4)DRAIN
(5)CATHODE
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
Absolute maximum ratings
(Ta=25擄C)
< MOSFET >
Parameter
DRAIN鈭扴OURCE VOLTAGE
GATE鈭扴OURCE VOLTAGE
CONTINUOUS
DRAIN CURRENT
PULSED
SOURCE CURRENT
(BODY
DIODE)
CONTINUOUS
PULSED
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
Tch
Limits
鈭?0
鹵12
鹵1.5
鹵6.0
鈭?.75
鈭?.3
150
Unit
V
V
A
A
A
A
C
PW< 10碌s DUTY CYCLE <1%
=
=
PW< 10碌s DUTY CYCLE <1%
=
=
CHANNEL TEMPERATURE
< Di >
REPETITIVE PEAK REVERSE VOLTAGE
REVERSE VOLTAGE
FORWARD CURRENT
FORWARD CURRENT SURGE PEAK
JUNCTION TEMPERATURE
< MOSFET AND Di >
TOTAL POWER DISSIPATION
RANGE OF STRAGE TEMPERATURE
VRM
VR
IF
IFSM
Tj
25
20
1.0
3.0
125
V
V
A
A
C
60HZ / 1CYC.
PD
Tstg
1.0
鈭?0鈭?25
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
C
1/4
QS5U21相關(guān)型號(hào)PDF文件下載
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