QS5U17
Transistors
Small switching (30V, 2.0A)
QS5U17
Features
1) The QS5U17 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Nch MOSFET have a low on-state resistance with a
fast switching.
3) Nch MOSFET is reacted a low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
have a low forward voltage.
External dimensions
(Unit : mm)
1.0MAX
0.85鹵0.1
0.7鹵0.1
(4)
(5)
2.8鹵0.2
1.6鹵 0.2
0.1
0 to 0.1
(1)
(2)
(3)
0.4
+0.1
鈭?.05
0.16
+0.1
鈭?.06
Each lead has same dimensions
Applications
Load switch, DC / DC conversion
Abbreviated symbol :
U17
Structure
Silicon N-channel MOSFET
Schottky Barrier DIODE
Equivalent circuit
(5)
(4)
Packaging specifications
Package
Type
QS5U17
Code
Basic ordering unit (pieces)
Taping
TR
3000
(1)
鈭?
(2)
鈭?
(3)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Gate
(2) Source
(3) Anode
(4) Cathode
(5) Drain
Rev.A
0.3 to 0.6
2.9鹵0.1
1.9鹵0.2
0.95 0.95
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