TRANSISTOR MODULE
THREE PHASES BRIDGE TYPE
QF20AA40/60
QF20AA
is six pack Darlington power transistor module which has six transistors
connected in three phase bridge configuraction. Each transistor has a reverse paralleled
fast recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
20A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC Servo, UPS
Unit
A
Maximum Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Torque M5
Mass
A.C.1minute
Recommended Value 1.5 2.5 15 25
Typical Value
T
C
25
40
=pw 1ms
V
BE
2V
Conditions
Ratings
Tj 25
QF20AA40 QF20AA60
400
400
10
20 40
20
2
160
150
V
N m
f
B
g
Tj 25
Conditions
V
CB
V
CBO
V
EB
V
EBO
Ic 1A
Ic 4A I
B2
1A
300
450
400
600
75
100
2.0
2.5
1.0
Vcc 300V Ic 20A
0.5A
I
B1
0.5A I
B2
Ic 20A
Transistor part
Diode part
12.0
2.0
1.6
0.8
2.2
V
/W
s
V
V
Ratings
Min.
Max.
1.0
200
Unit
mA
mA
V
V
40
125
2500
2.7 28
95
600
600
Unit
V
V
V
A
A
A
W
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
V
CEX
SUS
Item
Collector Cut-off Current
Emitter Cut-off Current
QF20AA40
Collector Emitter
Sustaning Voltage
QF20AA60
QF20AA40
QF20AA60
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
SUS
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
Ic 20A V
CE
2V
Ic 20A V
CE
5V
Ic 20A I
B
0.27A
Ic 20A I
B
0.27A
61
1
2
