QEB421
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.035 (0.9)
0.028 (0.7)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
FEATURES
0.043 (1.1)
0.020 (0.5)
SCHEMATIC
鈥?Wavelength = 880 nm, AlGaAs
鈥?Wide Emission Angle, 120擄
ANODE
CATHODE
ANODE
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
鈥?Surface Mount PLCC-2 Package
鈥?High Power
NOTES:
1. Dimensions are in inches (mm)
2. Tolerance of 鹵 .010 (.25) on all non nominal dimensions
unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current
(4)
Power Dissipation
(1)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
opr
T
stg
T
sol
I
F
V
R
I
FM
P
D
Rating
-55 to +100
-55 to +100
260 for 10 sec
100
5
1.75
180
Unit
擄C
擄C
擄C
mA
V
A
mW
NOTES
1. Derate power dissipation linearly
2.4 mW/擄C above 25擄C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Pulse conditions; tp = 100
碌s,
T
=
10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25擄C)
MIN.
TYP.
MAX.
UNITS
SYMBOL
P
Peak Emission Wavelength
Spectral Bandwidth
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Radiant Flux
Temp. Coeff. of I
E
Temp. Coeff. of V
F
Temp. Coeff. of
Rise Time
Fall Time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA, tp = 20 ms
I
F
= 1 A, tp = 100
碌s
V
R
= 5 V
I
F
= 100 mA, tp = 20 ms
I
F
= 1 A, tp = 100
碌s
I
F
= 100 mA, tp = 20 ms
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
鈥?/div>
鈥?/div>
鈥?/div>
880
80
120
1.5
3.0
鈥?/div>
鈥?/div>
48
10
-0.5
-4
0.25
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.8
3.8
1
8
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1
1
nm
nm
Deg.
V
V
F
I
R
I
e
e
鈥?/div>
鈥?/div>
鈥?/div>
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
碌A(chǔ)
mW/sr
mW
%/K
mV/K
nm/K
T
CI
T
CV
T
C
t
r
t
f
碌s
碌s
錚?/div>
2001 Fairchild Semiconductor Corporation
DS300385
2/26/01
1 OF 3
www.fairchildsemi.com
QEB421 產(chǎn)品屬性
1,000
光電元件
紅外發(fā)射極
-
100mA
4mW/sr @ 100mA
880nm
1.5V
120°
頂視圖
表面貼裝
2-PLCC
散裝
QEB421相關(guān)型號PDF文件下載
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