QEB363
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
PACKAGE DIMENSIONS
0.276 (7.0)
MIN
CATHODE
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
0.016 (0.4)
0.074 (1.9)
0.019 (0.5)
0.012 (0.3)
FEATURES
鈥?T-3/4 (2mm) Surface Mount Package
鈥?Tape & Reel Option (See Tape & Reel Specifications)
鈥?Lead Form Options: Gullwing, Yoke, Z-Bend
0.055 (1.4)
.118 (3.0)
.102 (2.6)
.059 (1.5)
.051 (1.3)
鈥?Narrow Emission Angle, 24擄
鈥?Wavelength = 940 nm, GaAs
鈥?Pink Tinted Lens
鈥?Matched Photosensor: QSB363
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.024 (0.6)
SCHEMATIC
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of 鹵 .010 (.25) on all non nominal dimensions
unless otherwise specified.
鈥?High Radiant Intensity
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Units
擄C
擄C
擄C
擄C
mA
V
mW
NOTES
1. Derate power dissipation linearly
1.33 mW/擄C above 25擄C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Soldering iron tip at 1/16鈥?(1.6mm)
from housing
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25擄C)
MIN.
TYP.
MAX.
UNITS
SYMBOL
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA, t
P
= 20 ms
V
R
= 5 V
I
F
= 100 mA, t
P
= 20 ms
I
F
= 100 mA,
t
P
= 20 ms
!
P
"
V
F
I
R
I
e
t
r
t
f
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
8
鈥?/div>
鈥?/div>
940
鹵12
鈥?/div>
鈥?/div>
鈥?/div>
1
1
鈥?/div>
鈥?/div>
1.6
100
鈥?/div>
鈥?/div>
鈥?/div>
nm
Deg.
V
碌A(chǔ)
mW/sr
碌s
碌s
1 of 4
100007C
QEB363 產(chǎn)品屬性
1,000
光電元件
紅外發(fā)射極
-
100mA
8mW/sr @ 100ma
940nm
1.6V
24°
頂視圖
表面貼裝
2-SMD，扁平引線
散裝
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英文版
SUBMINIATURE PLASTIC INFRARED EMITTING DIODE
FAIRCHILD
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SUBMINIATURE PLASTIC INFRARED EMITTING DIODE
FAIRCHILD ...
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SUBMINIATURE PLASTIC INFRARED EMITTING DIODE
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Infrared (IR) Emitter 875nm 1.7V 50mA 16mW/sr @ 100mA 24° 2...
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英文版
SUBMINIATURE PLASTIC INFRARED EMITTING DIODE
FAIRCHILD ...
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英文版
Infrared (IR) Emitter 875nm 1.7V 50mA 16mW/sr @ 100mA 24° 2...
1
2
3
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