錛?/div>
QCA200BA60
is a dual Darlington power transistor module which has series-connected
ULTRA HIGH
h
FE
, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr錛?00ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction,
V
CEX
錛?00V
鈼?/div>
Low saturation voltage for higher efficiency.
鈼?/div>
ULTRA HIGH DC current gain h
FE
. h
FE
鈮?50
鈼?/div>
Isolated mounting base
鈼?/div>
V
EBO
10V for faster switching speed.
錛圓pplications錛?/div>
Motor Control錛圴VVF錛?AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
B2X
B2
E2
108max
93鹵0.5
4-
蠁6.5
7.5 6.0
7.5
6.0
B
1
X
E
1
B
1
25.0
14.0
25.0
3-M6
L=10max
AMP110
t=0.5
30.0max
37.0max
C2E1
C1
B1X
E1
B1
33.0max
24.0max
E2
Unit錛欰
鈻燤aximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
鈭捍
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
A.C.1minute
Mounting
錛圡6錛?/div>
Recommended Value 2.5-3.9錛?5-40錛?/div>
Terminal M6錛?Recommended Value 2.5-3.9錛?5-40錛?/div>
錛?/div>
Typical Value
T
C
錛?5鈩?/div>
錛?錛塸w鈮?ms
V
BE
錛濃垝2V
Conditions
錛圱j錛?5鈩?/div>
unless otherwise specified錛?/div>
Ratings
QCA200BA60
600
600
10
200錛?00錛?/div>
200
12
1250
鈭?0
to
錛?50
鈭?0
to
錛?25
2500
4.7錛?8錛?/div>
4.7錛?8錛?/div>
470
N錕?frac12;錕絤
(銕廸錕?frac12;錕紹)
g
Unit
V
V
V
A
A
A
W
鈩?/div>
鈩?/div>
鈻燛lectrical
Characteristics
Symbol
I
CBO
I
EBO
Item
Collector Cut-off Current
Emitter Cut-off Current
V
CB
錛漋
CBO
V
EB
錛漋
EBO
Ic錛?A
Ic錛?0A錛孖
B2
錛濃垝8A
Ic錛?00A錛孷
CE
錛?.5V
Ic錛?00A錛孖
B
錛?.26A
Ic錛?00A錛孖
B
錛?.26A
Vcc錛?00V錛孖c錛?00A
I
B1
錛?.4A錛孖
B2
錛濃垝4A
Ic錛濃垝200A
Vcc錛?00V, Ic錛濃垝200A,
鈭抎i/dt錛?00A/渭s,
V
BE
錛濃垝5V
Transistor part
Diode part
200
0.1
0.3
450
600
750
2.5
3.0
2.0
8.0
2.0
1.8
V
ns
鈩?W
渭s
V
V
Conditions
Ratings
Min.
Typ.
Max.
2.0
800
Unit
mA
mA
V
錛圫US錛?/div>
Collector Emitter Sustaning
V
CEO
錛圫US錛?/div>
Voltage
V
CEX
h
FE
錛坰at錛?/div>
V
CE
錛坰at錛?/div>
V
BE
D.C. Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Reverse Recovery time
Thermal Impedance
(junction to case)
ton
ts
tf
V
ECO
trr
Rth j-c錛?/div>
錛?/div>
SanRex
廬
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
48鹵0.5
15
15
B
2
X
63.0max
鈼?/div>
I
C
錛?00A,
C
2
E
1
E
2
C
1
B
2
E
2
next
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