ILD205T/206T/207T/211T/213T/217T
Dual Phototransistor
Small Outline Surface Mount Optocoupler
FEATURES
鈥?Two Channel Coupler
鈥?SOIC-8A Surface Mountable Package
鈥?Standard Lead Spacing of .05"
鈥?Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)
鈥?Isolation Test Voltage, 3000 V
RMS
鈥?High Current Transfer Ratios
ILD205T, 40 鈥?80%
ILD206T, 63 鈥?25%
ILD207T, 100 鈥?200%
ILD211T, 20% Minimum
ILD213T, 100% Minimum
ILD217T, 100% Minimum at 1.0 mA
鈥?High BV
CEO
, 70 V
鈥?Compatible with Dual Wave, Vapor Phase and
IR Re鏗俹w Soldering
鈥?Underwriters Laboratory File #E52744
(Code Letter Y)
DESCRIPTION
The ILD205T/206T/207T/211T/213T/217T are opti-
cally coupled pairs with a Gallium Arsenide infrared
LED and a silicon NPN phototransistor. Signal infor-
mation, including a DC level, can be transmitted by
the device while maintaining a high degree of elec-
trical isolation between input and output. The
ILD205T/6T/7T/11T/13T/17T come in a standard
SOIC-8A small outline package for surface mount-
ing which makes it ideally suited for high density
applications with limited space. In addition to elimi-
nating through-holes requirements, this package
conforms to standards for surface mounted devices.
A speci鏗乪d minimum and maximum CTR allows a nar-
row tolerance in the electrical design of the adjacent cir-
cuits. The high BV
CEO
of 70 volts gives a higher safety
margin compared to the industry standard of 30 volts.
Maximum Ratings
(Each Channel)
Emitter
Peak Reverse Voltage ..................................... 6.0 V
Peak Pulsed Current (1.0
碌
s, 300 pps) ...........1.0 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25
擄
C............................ 50 mW
Derate Linearly from 25
擄
C ....................0.66 mW/
擄
C
Detector
Collector-Emitter Breakdown Voltage............... 70 V
Emitter-Collector Breakdown Voltage.............. 7.0 V
Power Dissipation per Channel .................. 125 mW
Derate Linearly from 25
擄
C ....................1.67 mW/
擄
C
Package
Total Package Dissipation at 25
擄
C Ambient
(2 LEDs + 2 Detectors, 2 Channels)....... 300 mW
Derate Linearly from 25
擄
C ......................4.0 mW/
擄
C
Storage Temperature ...................鈥?5
擄
C to +150
擄
C
Operating Temperature ...............鈥?5
擄
C to +100
擄
C
Soldering Time at 260
擄
C ............................. 10 sec.
Dimensions in inches (mm)
Pin 1
.120鹵.002
(3.05鹵.05)
.240
(6.10)
Anode 1
Cathode 2
C .154鹵.002
L
(3.91鹵.05) Anode 3
Cathode 4
.016 (.41)
.230鹵.002
(5.84鹵.05)
.015鹵.002
(.38鹵.05)
40擄
7擄
.058
(1.49)
.125 (3.18)
5擄 max.
R.010
(.25) max.
Lead
Coplanarity
鹵.001
(.04)
max.
8 Collector
7 Emitter
6 Collector
5 Emitter
.004 (.10)
.008 (.20)
.050 (1.27) typ.
.040 (1.02)
.008 (.20)
.020鹵.004
(.5鹵.10)
2 plcs.
Table 1. Characteristics
T
A
=25
擄
C
Parameter
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
BV
CEO
BV
ECO
I
CEO
Collector-Emitter
Capacitance
Package
DC Current Transfer, ILD205
V
CE
=5.0 V
ILD206
ILD207
ILD211
ILD213
ILD205
ILD206
ILD207
ILD217
Collector-Emitter Saturation
Voltage
V
CE(sat)
Capacitance, Input to Output
Isolation Test Voltage
Resistance, Input to Output
Turn-on Time
Turn-off Time
40
63
100
20
100
13
22
34
100
鈥?/div>
鈥?/div>
3000
鈥?/div>
鈥?/div>
鈥?/div>
100
5.0
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
30
45
70
120
鈥?/div>
0.5
80
125
200
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
pF
V
RMS
G
鈩?/div>
碌
s
碌
s
I
F
=10 mA
I
C
=2.5 mA
鈥?/div>
t=1.0 sec.
鈥?/div>
I
C
=2.0 mA
R
L
= 100
鈩?/div>
V
CC
=5.0 V
I
F
=1.0 mA
%
I
F
=10 mA
70
7.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
10
鈥?/div>
鈥?/div>
50
鈥?/div>
V
V
nA
pF
I
C
=10 碌A
I
E
=10 碌A
V
CE
=10 V
I
F
=0
V
CE
=0
鈥?/div>
鈥?/div>
鈥?/div>
1.2
0.1
25
1.55
100
鈥?/div>
V
碌
A
pF
I
F
=10 mA
V
R
=6.0 V
V
R
=0
Min.
Typ.
Max. Unit
Condition
錚?/div>
2001 In鏗乶eon Technologies Corp. 鈥?Optoelectronics Division 鈥?San Jose, CA
www.in鏗乶eon.com/opto 鈥?1-888-In鏗乶eon (1-888-463-4636)
2鈥?81
February 12, 2001-10
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