4M
脳
1-Bit Dynamic RAM
HYB 514100BJ-50/-60
Advanced Information
鈥?4 194 304 words by 1-bit organization
鈥?0 to 70
擄C
operating temperature
鈥?Fast Page Mode Operation
鈥?Performance:
-50
-60
60
15
30
110
40
ns
ns
ns
ns
ns
t
RAC
RAS access time
t
CAC
CAS access time
t
AA
t
RC
t
PC
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
95
35
鈥?Single + 5 V (鹵 10 %) supply with a built-in
V
BB
generator
鈥?Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
鈥?Standby power dissipation:
11 mW max. standby (TTL)
5.5 mW max. standby (CMOS)
鈥?Output unlatched at cycle end allows two-dimensional chip selection
鈥?Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
鈥?All inputs and outputs TTL-compatible
鈥?1024 refresh cycles/16 ms
鈥?Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group
1
1998-10-01