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4 194 304 words by 36-Bit organization
Fast access and cycle time
60 ns RAS access time
15 ns CAS access time
104 ns cycle time
Hyper page mode (EDO) capability
25 ns cycle time
Single + 5 V (鹵 10 %) supply
Low power dissipation
max. 7260 mW active
CMOS 鈥?66 mW standby
TTL 鈥?132 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
12 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height
Utilizes 12 4M x 3 DRAM鈥檚 in 300 mil SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (HYM 364035S-60)
Gold contact pads (HYM 364035GS-60)
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Semiconductor Group
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Q67100-Q3017相關型號PDF文件下載
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