4M
脳
4-Bit Dynamic RAM
2k & 4k Refresh
(Fast Page Mode)
Advanced Information
鈥?4 194 304 words by 4-bit organization
鈥?0 to 70
擄C
operating temperature
鈥?Fast Page Mode operation
鈥?Performance:
-50
-60
60
15
30
40
ns
ns
ns
ns
HYB 5116400BJ-50/-60
HYB 5117400BJ-50/-60
HYB 3116400BJ/BT-50/-60
HYB 3117400BJ-50/-60
t
RAC
RAS access time
t
CAC
CAS access time
t
AA
t
RC
t
PC
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
84
35
104 ns
鈥?Power Dissipation, Refresh & Addressing:
HYB 5116400
-50
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
275
11
5.5
-60
5 V
鹵
10%
12/10
220
HYB 3116400
-50
-60
3.3 V
鹵
0.3 V
12/10
180
7.2
3.6
144
HYB 5117400
-50
-60
5 V
鹵
10%
11/11
440
11
5.5
385
HYB 3117400
-50
-60
3.3 V
鹵
0.3 V
11/11
288
7.2
3.6
252
mW
mW
mW
4096 cycles / 64 ms
2048 cycles / 32 ms
鈥?Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and test mode
鈥?All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
鈥?Plastic Package: P-SOJ-26/24-1
300 mil
P-TSOPII-26/24-1 300 mil
Semiconductor Group
1
1998-10-01