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Q67040S4718 Datasheet

  • Q67040S4718

  • Low Loss DuoPack : IGBT in Trench and Fieldstop technology w...

  • 13頁(yè)

  • INFINEON   INFINEON

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TrenchStop Series
IKW50N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 擄C
Short circuit withstand time 鈥?5碌s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C
50A
V
CE(sat),Tj=25擄C
1.5V
T
j,max
175擄C
Marking Code
K50T60
Package
TO-247
C
G
E
P-TO-247-3-1
(TO-220AC)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Type
IKW50N60T
Ordering Code
Q67040S4718
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25擄C
T
C
= 100擄C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (V
CE
鈮?/div>
600V,
T
j
鈮?/div>
175擄C)
Diode forward current, limited by
T
jmax
T
C
= 25擄C
T
C
= 100擄C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
鈮?/div>
400V,
T
j
鈮?/div>
150擄C
Power dissipation
T
C
= 25擄C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
333
-40...+175
-55...+175
260
W
擄C
I
Fpuls
V
GE
t
SC
I
Cpuls
-
I
F
100
50
150
鹵20
5
V
碌s
Symbol
V
CE
I
C
80
1)
50
150
150
Value
600
Unit
V
A
1)
2)
Value limited by bond wire
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1 Dec-04
Power Semiconductors

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