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Q67040S4187 Datasheet

  • Q67040S4187

  • TRANSISTOR MOSFET TO-252

  • 127.33KB

  • 9頁

  • ETC

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Preliminary data
SPU03N60S5
SPD03N60S5
Cool MOS鈩?Power Transistor
=
鈥?New
revolutionary high voltage technology
鈥?/div>
Ultra low gate charge
鈥?Periodic
avalanche rated
鈥?/div>
Extreme dv/dt rated
鈥?Optimized
capacitances
鈥?Improved
noise immunity
鈥?Former
development designation:
-
C OLMOS
O
Power Semiconductors
Product Summary
V
DS
@
T
jmax
R
DS(on)
I
D
P-TO252
650
1.4
3.2
V
鈩?/div>
A
P-TO251-3-1
Type
SPU03N60S5
SPD03N60S5
Package
P-TO251-3-1
P-TO252
Ordering Code
Q67040-S4227
Q67040-S4187
Marking
03N60S5
03N60S5
G,1
D,2
S,3
Maximum Ratings,at
T
j
= 25 擄C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25擄C
T
C
=100擄C
Symbol
I
D
Value
3.2
2
Unit
A
Pulsed drain current
T
C
=25擄C
1)
I
D puls
E
AS
E
AR
I
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
1
5.7
100
0.2
3.2
6
鹵20
38
-55... +150
A
kV/碌s
V
W
擄C
mJ
Avalanche energy, single pulse
I
D
= 2.56 A,
V
DD
= 50 V
Avalanche energy (repetitive, limited by
T
jmax
)
I
D
= 3.2 A ,
V
DD
= 50 V
Avalanche current (repetitive, limited by
T
jmax
)
Reverse diode dv/dt
I
S
=3.2A,
V
DS
<V
DSS
, di/dt=100A/碌s,
T
jmax
=150擄C
Gate source voltage
Power dissipation
T
C
=25擄C
Operating and storage temperature
2001-07-25

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